型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
MT53E1G32D2FW-046 WT:B | SDRAM存储器 |
MICRON/美光 |
FBGA |
21+ |
2000 |
|||
H9HCNNNBKMMLXR-NEE | SKHYNIX/海力士 |
FBGA |
22+ |
3600 |
||||
TH58NVG3S0HTAI0 | FLASH存储器 |
TOSHIBA/东芝 |
TSOP48 |
21+ |
50400 |
|||
K4AAG085WA-BCWE | SAMSUNG/三星 |
FBGA |
21+ |
2000 |
||||
MT40A512M16LY-075:E | DDR存储器 |
MICRON/美光 |
FBGA |
21+ |
20000 |
|||
K4AAG165WA-BCTD | 存储IC |
SAMSUNG/三星 |
FBGA |
21+ |
18000 |
|||
K4AAG165WA-BCWE | IC |
SAMSUNG/三星 |
FBGA |
21+ |
40320 |
|||
K4F8E3S4HD-MGCL | SDRAM存储器 |
SAMSUNG/三星 |
FBGA |
21+ |
30240 |
|||
K4F6E3S4HM-MGCJ | SDRAM存储器 |
SAMSUNG/三星 |
FBGA |
23+ |
20000 |
|||
MT53E512M32D1ZW-046 WT:B | SDRAM存储器 |
MICRON/美光 |
BGA |
21+ |
4000 |
|||
MT40A1G16TB-062E:F | DDR存储器 |
MICRON/美光 |
FBGA |
22+ |
20000 |
|||
K4A8G085WC-BITD | DDR存储器 |
SAMSUNG/三星 |
FBGA |
21+ |
9000 |
|||
MT40A2G8JC-062E IT:E | MICRON/美光 |
FBGA |
21+ |
2000 |
||||
KLMBG2JENB-B041 | 存储IC |
SAMSUNG/三星 |
FBGA |
19+ |
3360 |
|||
H5TC4G63EFR-PBA | SKHYNIX/海力士 |
FBGA |
19+ |
2000 |
||||
H5AN8G8NAFR-UHC | 存储IC |
SKHYNIX/海力士 |
FBGA |
18+ |
389 |
|||
H56C8H24AIR-S2C | SDRAM存储器 |
SKHYNIX/海力士 |
BGA |
21+ |
60000 |
|||
KLM8G1GETR-B041 | eMMC |
SAMSUNG/三星 |
BGA |
21+ |
4480 |
|||
S25FL256SAGMFI001 | FLASH存储器 |
CY/Spansion |
SOP16 |
20+ |
2115 |
|||
K4F6E3S4HM-MGCJ | SDRAM存储器 |
SAMSUNG/三星 |
FBGA |
21+ |
20000 |
商家默认展示20条库存